Heterogeneous miniaturization platform

ABSTRACT

A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.

BACKGROUND Technical Field

The present invention generally relates to microelectronics, and moreparticularly to employing wafer processing technology to createelectrical components at the nanoscale and microscale level.

Description of the Related Art

Methods and equipment are needed to create components that can be usedin a heterogeneous system miniaturization platform for healthcareapplications, smart tag applications, automotive applications, Internetof Things (IoT) as well as for providing for secure uses in otherfields. The platforms needed are to permit integration at themillimeter, micron and nano sizes for one or more dimensions for systemintegration at the active and passive components level, subsystem leveland supports integrated electronics. The platforms are needed to supportheterogeneous integration at low cost and low power to systems inhealthcare, industry, government and automotive applications at lowvolume production (<10,000 to <100,000), intermediate volume production(100,000 to 10M) and very high volume production (>10M to >1B) per year.

SUMMARY

The methods, and structures disclosed herein can provide for creatingintegrated millimeter, micron and nano sized heterogeneous systems inlow volume to high volume production at low cost, as well as providingcomponent sizes at the nanoscale, microscale and millimeter sale. Inaccordance with one embodiment of the present disclosure, the methods,structures and systems disclosed herein can create integratedmillimeter, micron and nano sized systems in low to very high volume atlow cost. In some embodiments, the methods, structures and systemsdisclosed herein provide an integrated electronics platform andappropriate packaging integration solution to support active and passivecomponents such as active silicon microprocessors, memory and othercircuits along with, polymer, ceramic, glass or metal packagingplatforms that can support the miniaturized electronics, and alsosupport larger batteries, antenna, inductor coils, sensors andapplication compatible form factors from bio compatible implantablesolutions with hermetic seals and rechargeable inductor coils and/orultra small X & Y dimensions but long z dimension such as compatiblewith needle/probe or catheter insertions and/or wearable systems with alarger flexible electronic electrodes, antenna, inductor coils and/orbattery and moisture resistant coating around the electronics to supportreliability in the presence of moisture, sweat or other body fluids tomicrosystems to support internet of things (IoT) sensors, robotics,industry and equipment monitoring sensors, automotive sensors, securitysystems and other applications. These applications can have unique formfactor requirements, may have a one time use or may have extendedlifetimes of decades and require unique energy solutions and support forone or more modes of communication including wired, wireless RF,optical, sound or ultrasound to alternative methods.

In some embodiments, the structures, methods, equipment and applicationexamples for Internet of Things (IOT) integration of components,subsystems and integrated products that leverage wafer scale and panelscale processing to create structures, processes, equipment and productsto support applications needing small electronics integrationsubsystems, sensors and for some applications full heterogeneous systemsolutions. The size reduction from current >100,000's to >1000's of mmcube volume of heterogeneous systems to 100's to few 10's of mm cubesize to sizes in the <1 mm cube or even <0.01 mm cube volume can supportheterogeneous integration using wafer, panel level and other massintegration methods that support mass production for volume products,support cost reduction at level of orders of magnitude from currentproduct sizes and costs and support the adoption of very low powersystems with integrated energy management, small energy solutions fromrechargeable batteries and capacitors, single use batteries and energyscavenging and/or externally powered devices to low power disposablesystems or subsystems. These small electronics sub-systems can beintegrated with larger antenna, electrodes and/or batteries to providean integrated internet of things (IoT) product such as a healthcaredevice for medical trending, a smart tag for supply chain tracking orhealthcare pill conformance verification, blister pack tracking or forother applications.

In one embodiment, a method of forming an electrical device is providedthat includes forming microprocessor devices on a microprocessor waferand die; forming memory devices on an memory device wafer and die,forming field programmable gate array (FPGA) devices on a FPGA wafer anddie; heterogeneous function wafers and die, forming sensors andcomponents or devices on a component wafer and die; and forming aplurality of heterogeneous packaging devices on a heterogeneouspackaging integration wafer, panel or multi-purpose die or package alongwith associated post assembly and integration encapsulation or hermeticsealing. Transferring a plurality of each of said microprocessordevices, memory devices, field programmable gate array (FPGA) devices,heterogeneous function wafer and die or system on a chip functionality,component devices and packaging components to a supporting substrate,wherein the packaging components electrically interconnect the memorydevices, component devices, microprocessor devices and other devices inindividualized groups. Sectioning the supporting substrate to providesaid individualized groups of memory devices, component devices andmicroprocessor devices that are interconnected by a packaging component.In another embodiment, a system for forming an electrical device isprovided that includes a microprocessor die containing a plurality ofmicroprocessor devices; a memory device die containing a plurality ofmemory devices; a component die containing a plurality of componentdevices; and a packaging die containing a plurality of packagingdevices. The system for forming electrical devices may also include atleast one transfer substrate for transferring a plurality of each ofsaid microprocessor devices, memory devices, component devices andpackaging components to a supporting substrate. The packaging componentselectrically interconnect the memory devices, component devices andmicroprocessor devices in individualized groups.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a side cross-sectional view depicting of a device wafer foruse with the methods and structures for providing miniaturizationplatforms, in accordance with one embodiment of the present disclosure.

FIG. 2 is a side cross-sectional view depicting bonding of the devicewafer depicted in FIG. 1 to a first handling wafer.

FIG. 3A is a side cross-sectional view depicting wafer thinning of thedevice wafer depicted in FIG. 2, in which the wafer includes componentsand sensors.

FIG. 3B is a side cross-sectional view depicting a variety of componentsbeing made using singulation steps following the device wafer thinningstep that is depicted in FIG. 3A, in accordance with one embodiment ofthe present disclosure.

FIG. 4A is a side cross-sectional view of a microprocessor die, inaccordance with one embodiment of the present disclosure.

FIG. 4B is a side cross-sectional view of a memory die, in accordancewith one embodiment of the present disclosure.

FIG. 4C is a side cross-sectional view of a component die, in accordancewith one embodiment of the present disclosure.

FIG. 4D is a side cross-sectional view of a packaging die, in accordancewith one embodiment of the present disclosure.

FIG. 5 is a side cross-sectional view depicting a process flow forcreating components in accordance with a miniaturization platform, inwhich the process flow includes a die first wiring scheme, in accordancewith one embodiment of the present disclosure.

FIG. 6 is a side cross-sectional view depicting a process flow forcreating components in accordance with a miniaturization platform, inwhich the process flow includes a package first wiring scheme, inaccordance with one embodiment of the present disclosure.

FIG. 7 is a side cross-sectional view depicting a process flow forcreating components in accordance with a miniaturization platform, inwhich the process flow includes a die first solder interconnect scheme,in accordance with one embodiment of the present disclosure.

FIG. 8 is a side cross-sectional view depicting a process flow forcreating components in accordance with a miniaturization platform, inwhich the process flow includes a package first solder interconnectscheme, in accordance with one embodiment of the present disclosure.

FIG. 9 is a side cross-sectional view depicting mounting theintegrated/miniaturized electronic sub-assemblies to another handlingsubstrate for transfer to a panel level process or roll to roll process.

FIG. 10 is a side cross-sectional view depicting transferring theintegrated/miniaturized electronic sub-assemblies a panel level processor roll to roll process.

DETAILED DESCRIPTION

Detailed embodiments of the claimed structures and methods are disclosedherein; however, it is to be understood that the disclosed embodimentsare merely illustrative of the claimed structures and methods that maybe embodied in various forms. In addition, each of the examples given inconnection with the various embodiments is intended to be illustrative,and not restrictive. Further, the figures are not necessarily to scale,some features may be exaggerated to show details of particularcomponents. Therefore, specific structural and functional detailsdisclosed herein are not to be interpreted as limiting, but merely as arepresentative basis for teaching one skilled in the art to variouslyemploy the methods and structures of the present disclosure. Forpurposes of the description hereinafter, the terms “upper”, “lower”,“right”, “left”, “vertical”, “horizontal”, “top”, “bottom”, andderivatives thereof shall relate to the embodiments of the disclosure,as it is oriented in the drawing figures. The terms “positioned on”means that a first element, such as a first structure, is present on asecond element, such as a second structure, wherein interveningelements, such as an interface structure, e.g. interface layer, may bepresent between the first element and the second element. The term“direct contact” means that a first element, such as a first structure,and a second element, such as a second structure, are connected withoutany intermediary conducting, insulating or semiconductor layers at theinterface of the two elements.

Methods and equipment are needed to create components that can be usedin a miniaturization platform for healthcare applications and smart tagapplication that can be integrated with micro-sized and nano-sizedsubcomponents and devices at ultra-low cost for volume production. Onechallenge facing the industry is to create heterogeneous integratedmicro and nano systems in volume at low cost, low power consumption, aswell as integrated heterogeneous systems or subsystems on the millimetervolumetric scale, e.g., 1 mm³ and much smaller. It has been determinedthat the use of materials including one or more of the followingsilicon, polymer, ceramic, glass, or metal packaging platforms cansupport our miniaturization structures, methods and applications, aswell as support system communication options including wired andwireless use of electrical connections, radio frequency, (RF), optical,ultra-sound, near field communications (NFC) or other communicationsand/or power transfer methods. As will be described in greater detailthroughout the present disclosure, a structure, method and applicationfor the use of a small and thinned silicon package form factor isprovided, in which the package includes integrated wiring, and/orwire-bonding and/or wireless interconnection and flip chip connection,or alternate component interconnection to interconnect smallsub-components for a system. The structure, method and application forthe use of the small and thinned silicon package form factor can providefor the volume manufacturing of sensors, smart tags, batteries,capacitors, inductors, sub-systems or other systems and subcomponents.The size package and integrated function can be from under 5 microns inthe x (depth), y (width) and z (height) directions, to being on themillimeter scale. For example, the size package and integrated functioncan be on the order of 1 millimeter or greater in the x (depth), y(width) and z (height) directions.

The sub components may contain one or more of the following functionsselected from the group consisting of microprocessor, micro-controller,cognitive micro-controller, field programmable gate array (FPGA), powermanagement, memory, phase change memory, non-volatile memory, sensors,optical, RF, near field communication (NFC), sound communication,capacitors, batteries, alternate energy sources, antenna, transducers,photovoltaics, mirrors, lens, optical interconnections, hybrid energysolutions, inductors, drug delivery devices, closed loop sensing andaction subsystems and combinations thereof. The use of stackedstructures is also disclosed, in which larger components act as packagesfor smaller components, such as antenna and/or power sources, providinga base for other system functions that can include, but is not limitedto, microprocessors, micro-controllers, cognitive controllers, FPGA,power management, memory, phase change memory, non-volatile memory,sensors, optical, radio frequency (RF) transmitters and receivers, nearfield communication (NFC), sound communication, capacitors,photovoltaics, inductors, drug delivery devices, closed loop sensing andaction subsystems and combinations thereof.

In some embodiments, the methods and structures disclosed herein mayemploy stacked structures in which a larger component acts as packagesfor smaller components, such as an antenna and/or power source providinga base for other system functions including, but not limited to,microprocessor, micro-controller, cognitive controller, FPGA, powermanagement, memory, phase change memory, non-volatile memory, sensors,optical, RF, NFC, sound communication, capacitors, photovoltaics andcombinations thereof.

The methods, structures and tooling for performing the methods mayemploy conductive adhesives for interconnection and/or integration. Themethods, structures and tool for performing the described methods mayemploy rigid structures for some system structures, such as thecircuitry of the device, and may employ flexible structure for somelarger components, such as antenna, batteries, photovoltaics and sensoryelectrodes. The flexible structures may also function as adhesives. Themethods and structures disclosed herein are now described in greaterdetail with reference to FIGS. 1-10.

FIG. 1 depicts one embodiment of a wafer 10 for use with the methods andstructures for providing miniaturization platforms. In some embodiments,the methods and structures disclosed herein employ wafer integrationtechnology to create components and integrated sub-components at themicron and nanosize scale that can be hermetically sealed to water (H₂O)and oxygen (O₂) as subsystems for internet of things (IOT), wearableelectronics and smart tag applications with bio-compatibility,environmentally compatibility bond and debond technology with theability to have wireless communications and recharge.

In some embodiments, the wafer 10 may be composed of a semiconductormaterial. In some embodiments, the wafer 10 is composed of a type IVsemiconductor or a type III-V semiconductor material. By “type IVsemiconductor” it is meant that the semiconductor material includes atleast one element from Group IVA (i.e., Group 14) of the Periodic Tableof Elements. Examples of type IV semiconductor materials that aresuitable for the fin structure include silicon (Si), germanium (Ge),silicon germanium (SiGe), silicon doped with carbon (Si:C), silicongermanium doped with carbon (SiGe:C), and a combination thereof.Typically, the semiconductor substrate 5 is composed of silicon (Si),e.g., single crystal silicon. In other embodiments, the semiconductorsubstrate 5 may be composed of a type III-V semiconductor substrate. Theterm “III-V semiconductor material” denotes a semiconductor materialthat includes at least one element from Group IIIB of the Periodic Tableof Elements under the Old International Union of Pure and AppliedChemistry (IUPAC) classification system, or Group 13 of the NewInternational Union of Pure and Applied Chemistry classification system;and at least one element from Group VB of the Periodic Table ofElements, or Group 15 of the New International Union of Pure and AppliedChemistry classification system. In some embodiments, the III-Vsemiconductor material that provides the III-V semiconductor substrate 5may be selected from the group of (AlSb), aluminum arsenide (AlAs),aluminum nitride (AlN), aluminum phosphide (AlP), gallium arsenide(GaAs), gallium phosphide (GaP), indium antimonide (InSb), indiumarsenic (InAs), indium nitride (InN), indium phosphide (InP), aluminumgallium arsenide (AlGaAs), indium gallium phosphide (InGaP), aluminumindium arsenic (AlInAs), aluminum indium antimonide (AlInSb), galliumarsenide nitride (GaAsN), gallium arsenide antimonide (GaAsSb), aluminumgallium nitride (AlGaN), aluminum gallium phosphide (AlGaP), indiumgallium nitride (InGaN), indium arsenide antimonide (InAsSb), indiumgallium antimonide (InGaSb), aluminum gallium indium phosphide(AlGaInP), aluminum gallium arsenide phosphide (AlGaAsP), indium galliumarsenide phosphide (InGaAsP), indium arsenide antimonide phosphide(InArSbP), aluminum indium arsenide phosphide (AlInAsP), aluminumgallium arsenide nitride (AlGaAsN), indium gallium arsenide nitride(InGaAsN), indium aluminum arsenide nitride (InAlAsN), gallium arsenideantimonide nitride (GaAsSbN), gallium indium nitride arsenide aluminumantimonide (GaInNAsSb), gallium indium arsenide antimonide phosphide(GaInAsSbP), gallium nitride (GaN) and combinations thereof. The wafer10 may be a bulk semiconductor substrate, or the wafer 10 may also be asemiconductor on insulator (SOI) substrate, such as a silicon (Si) layeroverlying a buried oxide layer.

Still referring to FIG. 1, the wafer 10 may include any number ofelectrical components and sensors. The wafer 10 may include a number ofelectrical devices and components, such as semiconductor devices ormemory devices and/or sensors For example, the substrate may includetransistors, e.g., field effect transistors (FET), fin type field effecttransistors (FinFETs), bipolar junction transistors (BJTs), nanowire,FET and/or BJT sensors, thin film transistors (TFTs) and combinationsthereof; memory devices, such as random access memory (RAM), dynamicrandom access memory (DRAM), embedded dynamic access memory (EDRAM),flash memory and combinations thereof; and passive electrical devices,such as resistors and capacitors. The sensors may include lightwavelength sensors, resistance sensors, heat sensors, bio-nano sensors,bio-electro-chemical sensors, optical sensors, electrical sensors andcombinations thereof. The wafers 10 may also include power sources, suchas primary batteries, secondary batteries, bio and ecologicallycompatible reusable batteries, rechargeable batteries such as but notlimited to Si ion based batteries and single use or multi-use disposablebatteries. The wafers 10 may also include transmission structures, suchantennae for transmitting and receiving signals.

The aforementioned electrical components and sensors, which may be ofnanoscale, microscale or macroscale (e.g., 1 mm or larger), may beformed on the wafer using a variety of subtractive and/or additivemethods. Additive methods may include deposition processes, such aschemical vapor deposition (CVD), e.g., plasma enhanced chemical vapordeposition (PECVD), or physical vapor deposition, e.g., plating,electroless plating, electroplating, or atomic layer deposition (ALD) ora combination thereof. Subtractive methods can include etch processes,such as reactive ion etch (RIE), deep reactive ion etch (DRIE), chemicaletch, laser dicing/ablation or other etch or removal processes which canbe conducted following the formation of etch masks formed by processesincluding photolithography, e.g., dielectric hard masks, or photoresistmasks or through use of scanning ablation or other removal methods. Theformation of the electrical components may be referred to as waferfabrication of die. It is also noted that the aforementioned components,memory devices, and microprocessors may be configured to provide asecure system by incorporating secure components and architectures whereand when necessary.

FIG. 2 depicts bonding of the wafer 10 depicted in FIG. 1 to a handlingstructure 15. Hereafter the wafer 10 that includes the electricaldevices, e.g., components and sensors (described above), may be referredto as the device wafer 10, and the handling structure 15 may be referredto as a first handling wafer 15. The first handling wafer 15 may becomposed of any material having a thickness that provides sufficientrigidity for supporting the thinned and sectioned portions of the devicewafer 10 that include separate electrical device structures, that can bereferred to as die. In some embodiments, the first handling wafer 15 maybe composed of a semiconductor material, such as a type IV semiconductormaterial, e.g., silicon, and/or type III-V semiconductor material. Inother embodiments, the first handling wafer 15 may be composed of adielectric material, such as ceramic, composite, silicon oxide, quartz,sapphire, silicon carbide, silicon nitride or a glass wafer, substrateor panel with controlled planarity, finish, optical transparency,coefficient of thermal expansion, temperature stability and chemicalresistance. In yet other embodiments, the first handling wafer 15 may becomposed of a metal or metal composite and have an appropriate surfacefinish or coating. In some examples, the device wafer 10 is joined tothe handling wafer 15 using bonding methods that employ adhesives. Inother embodiments, the device wafer 10 is joined to the handling wafer15 using thermal bonding, which can include thermal bonding betweenoxide containing layers that are put into contact with each other underpressure at an elevated temperature.

FIG. 3A illustrates thinning of the device wafer 10, in which the devicewafer 10 includes the aforementioned electrical devices, e.g.,components and sensors. Wafer thinning may include a preferred processof coarse grinding, fine grinding and followed by a polishing orchemical mechanical planarization method. Other thinning techniques mayuse planarizing, grinding, chemical mechanical planarization (CMP) andthinning by etching, which is typically applied to the backside of thedevice wafer 10 opposite the side that the components and electricaldevices are most proximate to. Wafer thinning may also include spallingmethods. In some embodiments, the thickness of the device wafer 10typically begins at a thickness of about 780 microns for 300 mm wafersand about 730 microns for 200 mm wafers and then ranges from 500 micronsto under 50 microns in many applications and from 50 microns to under 20microns for many applications in this embodiment for the thickness ofdevice wafer 10. In some cases, the assembly of subcomponents orportions of the subassembly may be comprised of components of 10 to 150microns thickness and the integration of 2 or more component structuresmay provide that the integrated components have a combined thickness of20 microns to 100 microns or 100 microns to 500 microns.

FIG. 3B depicts a variety of components being made using singulationsteps following the device wafer thinning step that is depicted in FIG.3A. Singulation (also referred to as die cutting or dicing) of thedevice wafer 10, is the sectioning of the device wafer 10 so thatindividual electronic devices and components 10″ are associated withseparate portions of the device wafer 10. For example, in themanufacturing of micro-electronic devices, die cutting, dicing orsingulation is a process of reducing a wafer containing multipleidentical integrated circuits to individual dies each containing one ofthose circuits. During this process, the device wafer 10 with up tothousands of circuits is cut into rectangular pieces, each called a die.In between those functional parts of the circuits, a thin non-functionalspacing is foreseen where a saw, a laser or preferably of deep reactiveion etch can safely cut the wafer without damaging the circuitsutilizing a minimum singulation width and therein utilizing a minimalactive surface of the wafer so as to permit a maximum number of die orcomponents to be fabricated with the wafer fabrication, the thinningprocess and the heterogeneous integration method to support the low costheterogeneous integrated system cost.

In accordance with some embodiments of the methods disclosed herein,singulation may be provided using anisotropic etching. As used herein,an “anisotropic etch process” denotes a material removal process inwhich the etch rate in the direction normal to the surface to be etchedis greater than in the direction parallel to the surface to be etched.The anisotropic etch may include reactive-ion etching (RIE). Otherexamples of anisotropic etching that can be used at this point of thepresent invention include ion beam etching, plasma etching or laserablation. In some other embodiments, singulation is performed with awater-cooled circular saw with diamond-tipped teeth.

FIGS. 4A-4C depict a variety of components being made by the processsequence described with reference to FIGS. 1-3B, in which followingsingulation the individual electronic devices and components 10″ areremoved from the first handling wafer 15 and engaged to a secondhandling wafer 20 a, 20 b, 20 c, 20 d. In some embodiments, theindividual electronic devices and components 10″ that depicted in FIG.3B are joined to the second handling substrate 20 a, 20 b, 20 c, 20 d,as depicted in FIGS. 4A-4C, using solder bump processing, in which thesolder bumps are identified by reference number 25. In accordance withsolder bump processing, pads are metalized on the surface of theindividual electronic devices and components 10″ that are defined inFIG. 3B, and solder dots are deposited on each of the pads. The soldermay be tin/lead based solder or may be lead free solder such as, fromthe SnAg, SnCu, SnAgCu, In, InSn, InSnBi, InBi or other alloys andcompositions. The solder dots may be deposited using physical vapordeposition (PVD), with sputtering, with electrochemical plating methodsor with injection molded solder (IMS) techniques. The solder dots maythen be brought into contact with the second handling substrate 20 a, 20b, 20 c, 20 d, in which the solder may be heated to remelt and connectthe individual electronic devices and components 10″ to the secondhandling substrate 20 a, 20 b, 20 c, 20 d. Joining, reflow, remelt, hotgas, laser, thermal compression bonding/joining may be provided by heatwith a controlled ambient atmosphere compatible with the targetedinterconnection allow, die and packaging or alternate method. Followingconnection of the individual electronic devices and components 10″ tothe second handling substrate 20 a, 20 b, 20 c, 20 d, the first handlingsubstrate 15 may be removed. In one example, the first handlingsubstrate 15 may be removed by laser ablation to break the adhesive bondbetween the first handling substrate 15 and the individual electronicdevices and components 10″. In some embodiments, the solder dots may beomitted at this stage of the process flow.

FIG. 4A illustrates one embodiment of individual electronic devices andcomponents 10″ that are connected to a second handling substrate 20 a,which provide microprocessor die 21. The microprocessor die 21 mayinclude at least one semiconductor device, such as a transistor, fieldeffect transistor (FET), metal organic semiconductor field effecttransistors (MOSFETS), complementary metal oxide semiconductor (CMOS),Fin type Field Effect Transistor (FinFET), bipolar junction transistor(BJT), heterojunction bipolar junction transistor (HBT), andcombinations thereof. The microprocessor die 21 may also includemicro-controllers, and power management devices. The aforementioneddevices are provided by the transferred individual electronic devicesand components 10″ from the device wafer 10.

In some embodiments, the microprocessor die 21 includes at least onemicroprocessor 22, e.g., computer processor, which incorporates thefunctions of a computer's central processing unit (CPU) on a singleintegrated circuit (IC), or a few integrated circuits. Themicroprocessor can be a multipurpose, clock driven, register based,programmable electronic device which accepts digital or binary data asinput, processes it according to instructions stored in its memory, andprovides results as output. Microprocessors can use both combinationallogic and sequential digital logic.

Although FIG. 4A only illustrates three separate microprocessor 22, themethods and structures disclosed herein are not limited to only thisexample, as any number of individual electronic devices and components10″ may be transferred to the second handling wafer 20 a to provide themicroprocessor die 21. For example, the number of separatemicroprocessors 22 may range from 1 to 10,000,000 or in some embodimentsgreater. In other examples, the number of separate microprocessors 22 onthe microprocessor die 21 may be equal to 1, 5, 10 microprocessors, 50microprocessors, 100 microprocessors, 1,000 microprocessors, 2,000microprocessors, 3,000 microprocessors, 4,000 microprocessors, 5,000microprocessors, 10,000 microprocessors, 50,000 microprocessors, 100,000microprocessors, 250,000 microprocessors, 500,000 microprocessors,1,000,000 microprocessors, 10,000,000 microprocessors, and any range ofmicroprocessors including a lower limit and a lower limit provided bythe aforementioned examples.

FIG. 4B illustrates one embodiment of individual electronic devices andcomponents 10″ that are connected to a second handling substrate 20 b,which provide a memory die 23. The memory die 23 may include at leastone memory device, such as a memory, phase change memory, non-volatilememory, volatile memory and combinations thereof. In some embodiments,the memory device may be provided by static random access memory (SRAM),dynamic random access memory (DRAM), embedded dynamic access memory(eDRAM), flash memory, phase change memory and combinations thereof.Each individual memory device is illustrated by reference number 24. Theaforementioned memory devices are provided by the transferred individualelectronic devices and components 10″ from the device wafer 10. Similarto the number of microprocessors of the microprocessor die 21, althoughthe memory die 23 depicts only three memory devices 24, the presentdisclosure is not limited to only this example. The number of memorydevices 24 present on the memory die 23 can be equal to any range ofnumbers described above for the number of microprocessors 22 on themicroprocessor die 21.

FIG. 4C illustrates one embodiment of individual electronic devices andcomponents 10″ that are connected to a second handling substrate 20 c,which provide a component die 26. The component die 26 may include atleast one electrical component 27, such as sensors, optical, radiofrequency (RF) transmitters and receivers, near field communication(NFC), sound communication, batteries, capacitors, photovoltaics, andcombinations thereof. In one embodiment, the component 27 may betransmit (Tx)/receive (Rx) transmitters or a sensor for sensing lightwavelength or other ambient conditions. The aforementioned memorydevices are provided by the transferred individual electronic devicesand components 10″ from the device wafer 10. Similar to the number ofmicroprocessors of the microprocessor die 21, although the component die26 depicts only three memory devices 27, the present disclosure is notlimited to only this example. The number of memory devices 27 present onthe memory die 26 can be equal to any range of numbers described abovefor the number of microprocessors 22 on the microprocessor die 21.

FIG. 4D illustrates one embodiment of individual electronic devices andcomponents 10″ that are connected to a second handling substrate 20 d,which provide a packaging die 29. The packaging die 29 may includepackaging components 28 that provided integrated circuit packaging forone of the final stages of electrical device fabrication, e.g.,semiconductor device fabrication, in which the tiny block ofsemiconducting material is encapsulated in a supporting case thatprevents physical damage and corrosion. The case, known as a “packagingcomponent”, supports the electrical contacts which connect the device,e.g., components of the device, to a circuit board. Similar to thenumber of microprocessors of the microprocessor die 21, although thecomponent die 26 depicts only three memory devices 27, the presentdisclosure is not limited to only this example. The number of memorydevices 27 present on the memory die 26 can be equal to any range ofnumbers described above for the number of microprocessors 22 on themicroprocessor die 21.

FIG. 5 depicting a process flow for creating components in accordancewith a miniaturization platform, in which the process flow includes adie first wiring scheme starting with transferring microprocessors 22,or other type electrical electronic devices and components (hereaftercollectively referred to as microprocessors 22), from the microprocessordie 21 to a third handling substrate 30. The third handling substrate 30is similar to the above described second handling substrate 20 a, 20 b,20 c, 20 d. Therefore, the above description of the second handlingsubstrate 20 a, 20 b, 20 c, 20 d is suitable for describing the thirdhandling substrate 30.

The microprocessors 22 may be die mounted to the third handlingsubstrate 30 with the die input/output (110) facing upward at Step 1A.Mounting of the microprocessors 22 to the handling substrate 30 mayemploy adhesives; deposited oxides, e.g., silicon oxide (SiO₂);deposited nitrides, e.g., silicon nitride; deposited metals, e.g.,titanium; and barrier layers, such as deposited metal nitride, e.g.,titanium nitride, tantalum nitride and combinations thereof. In otherembodiments bonding of the microprocessors 22 to the third handlingsubstrate 30 may include oxide to oxide bonding, such as thermal oxidebonding under thermal processing; laser bonding; or other alternatemethod as used in microelectronics fabrication.

In some embodiments, the microprocessors 22 are directly transferred tothe third supporting substrate 30. In other embodiments, themicroprocessors 22 are first transported from the microprocessor die 21to an intermediate transfer substrate, wherein in a following step themicroprocessors 22 are transferred from the intermediate transfersubstrate to the third handling substrate 30.

At step 2A, a memory device 24 can be transferred from the memory die 23to the third handling substrate 30. The memory device 24 may be diemounted to the third handling substrate 30 with the die input/output(110) facing upward. Mounting of the memory devices 24 to the thirdhandling substrate 30 may employ adhesives; deposited oxides, e.g.,silicon oxide (SiO₂); deposited nitrides, e.g., silicon nitride;deposited metals, e.g., titanium; and barrier layers, such as depositedmetal nitride, e.g., titanium nitride, tantalum nitride and combinationsthereof. In other embodiments bonding of the memory die 23 to the thirdhandling substrate 30 may include oxide to oxide bonding, such asthermal oxide bonding under thermal processing; laser bonding; or otheralternate method as used in microelectronics fabrication. Similar to thetransfer of the microprocessors 22 to the third handling substrate 30,the memory devices 24 may be transferred from the memory die 23 directlyto the third handling substrate 30, or the memory devices 24 may firstbe transferred to an intermediate transfer substrate, wherein in afollowing step the memory devices 24 are transferred from theintermediate transfer substrate to the third handling substrate 30.

It is noted that the memory devices 24 and the microprocessors 22 may bepositioned on the third handling substrate 30 substantially adjacent toone another, i.e., on the same level. In other embodiments, the memorydevices 24 and the microprocessors 22 may be stacked, i.e., verticallystacked atop one another.

At step 3A of the process flow depicted in FIG. 5, the component devices26 from the component die 27 are transferred to the third handlingsubstrate 30 after the memory devices 24, and the microprocessors 22have been transferred to the third handling substrate 30. The componentdevices 26 may include batteries, and transmitters, or any of thedevices that have been described above when describing the component die27. Mounting of the component devices 26 to the third handling substrate30 may employ adhesives; deposited oxides, e.g., silicon oxide (SiO₂);deposited nitrides, e.g., silicon nitride; deposited metals, e.g.,titanium; and barrier layers, such as deposited metal nitride, e.g.,titanium nitride, tantalum nitride and combinations thereof. In otherembodiments bonding of the component devices 26 to the third handlingsubstrate 30 may include oxide to oxide bonding, such as thermal oxidebonding under thermal processing; laser bonding; or other alternatemethod as used in microelectronics fabrication. Similar to the transferof the microprocessors 22 to the third handling substrate 30, thecomponent devices 26 may be transferred from the component die 27directly to the third handling substrate 30, or the component devices 26may first be transferred to an intermediate transfer substrate, whereinin a following step the component devices 26 are transferred from theintermediate transfer substrate to the third handling substrate 30.

It is noted that the component devices 26 may be positioned on the thirdhandling substrate 30 substantially adjacent to one of the memorydevices 24 and the microprocessors 22, i.e., on the same level. In otherembodiments, the component devices 26, memory devices 24 and themicroprocessors 22 may be stacked, i.e., vertically stacked atop oneanother.

It is noted that in the operations depicted in Steps 1A-3A, it can bepreferred to position using handle wafer, i.e., third handling wafer 30,to attach each unique heterogeneous die component, e.g., microprocessors22, memory devices 24, component devices 26 (e.g., sensor), or subsystemelement using the fewest multiple placements and join steps needed percomponent, e.g., microprocessors 22, memory devices 24, componentdevices 26, where possible to keep cost down and also to achieve highyield. In some embodiments, the number of components, e.g.,microprocessors 22, memory devices 24, component devices 26 beingtransferred, e.g., transferred to the third supporting substrate 30, canrange from 1 component, e.g., microprocessor 22, memory device 24,and/or component devices 26, to over 1,000,000 components, e.g.,microprocessors 22, memory devices 24, and/or component devices 26, atone time.

In other examples, the number of separate components, e.g.,microprocessors 22, memory devices 24, and/or component devices 26,being transferred to the third supporting substrate 30, as depicted inSteps 1A-3A, may be equal to 1, 5, 10 components, 50 components, 100components, 1,000 components, 2,000 components, 3,000 components, 4,000components, 5,000 components, 10,000 components, 50,000 components,100,000 components, 250,000 components, 500,000 components, 1,000,000components, 10,000,000 components, and any range of components includinga lower limit and a lower limit provided by the aforementioned examples.

In some embodiments, subsequent to bonding all the heterogeneous die andcomponents, i.e., microprocessors 22, memory devices 24, and/orcomponent devices 26, options to deposit an oxide layer, e.g., SiO₂; anitride layer, e.g., silicon nitride, or an alternative dielectric filmcan be made followed by lithography to open vias and wiring channelsdown to targeted I/O of the heterogeneous die and components, i.e.,microprocessors 22, memory devices 24, and/or component devices 26, ascopper or alternate metallurgies, create vias and wiringinterconnections using standard semiconductor damascene or alternatemethods of interconnection wiring.

Turning to Step 4A, the packaging components 28 from the packaging die29 may be transferred to the assembly of components, e.g.,microprocessor 22, memory device 24, and/or component devices 26, thathave already been transferred to the third handling substrate 30 inaccordance with Steps 1A-3A. The packaging components 28 include theelectrical communication structures, e.g., wiring, that electricallyinterconnect the microprocessor 22, memory devices 24 and/or thecomponent devices 26. The package components can include wiring andinterconnections targeted for component. As depicted in FIG. 5, thepackaging components 28 is stacked atop the layer of microprocessors 22,memory devices 24, and/or component devices 26 that have already beenbonded to the third support substrate 30.

Mounting of the packaging components 28 to the level of microprocessors22, memory devices 24, and/or component devices 26 that have been bondedto the third handling substrate 30 may include adhesives; depositedoxides, e.g., silicon oxide (SiO₂); deposited nitrides, e.g., siliconnitride; deposited metals, e.g., titanium; and barrier layers, such asdeposited metal nitride, e.g., titanium nitride, tantalum nitride andcombinations thereof. In other embodiments bonding of the packagingcomponents 28 may include oxide to oxide bonding, such as thermal oxidebonding under thermal processing; laser bonding; or other alternatemethod as used in microelectronics fabrication. Similar to the transferof the microprocessors 22, memory devices 24 and the component devices26 to the third handling substrate 30, the packaging components 28 maybe transferred from the packaging die 29 directly to the level ofmicroprocessors 22, memory devices 24, and/or component devices 26present on the third handling substrate 30, or the packaging components28 may first be transferred to an intermediate transfer substrate,wherein in a following step the packaging components 28 are transferredfrom the intermediate transfer substrate to the level of microprocessors22, memory devices 24, and/or component devices 26 present on thirdhandling substrate 30. In other embodiments transfer of the packagingcomponents 28 from the packaging die 29 to the level of microprocessors22, memory devices 24, and/or component devices 26 present on thirdhandling substrate 30 may employ a tape frame or other carrier.Following engagement of the packaging components 28, additional metal tometal bonding (Cu—Cu), and/or with oxide to oxide bonding may be appliedfor each attaché of multiple subcomponents.

Still referring to FIG. 5, at Step 5A solder balls, conductive adhesivesor other electrically conductive structures that can provide a means ofjoining devices, may be formed in electrical communication with theinterconnect structures in the packaging components 28 that provideelectrical communication between sets of microprocessors 22, memorydevices 24, and/or component devices 26. In accordance with solder bumpprocessing, pads are metalized on the surface of the packagingcomponents 28, and solder dots are deposited on each of the pads. Thesolder may be tin/lead based solder or may be lead free solder. Thesolder dots may be deposited using physical vapor deposition (PVD), suchas plating or sputtering.

Additional barriers may be formed, e.g., to hermetically seal, thecompleted to pads or I/O, additional etching may be performed aroundeach system or microsystem of heterogeneously integrated die, e.g.,components and sensors, i.e., groupings of microprocessors 22, memorydevices 24, packaging components 28 and/or component devices 26,followed by barrier coating deposition on top surface, such as withsilicon oxide (SiO₂), silicon nitride (SiN) or alternate materials, tocreate a barrier layer joined to the backside barrier layer in theetched channels around subsystems or systems and across the top of theheterogeneous integrated system. By hermetically seal it is meant thatthe grouping of components, i.e., microprocessors 22, memory devices 24,and component devices 26 interconnected by a packaging components 28,are sealed from being exposed to an atmosphere, e.g., air, oxygen,and/or water.

At Step 6A, the third handling substrate 30 may be thinned, e.g., viabackside thinning, and groupings of microprocessors 22, memory devices24 and component devices 26 that are interconnected by the packagingcomponents 28 may be separated from one another. Thinning may includeplanarizing, grinding, chemical mechanical planarization (CMP) andthinning by etching. Wafer thinning may also include spalling methods.Singulation (also referred to as die cutting or dicing) of the groupingsof microprocessors 22, memory devices 24 and component devices 26 thatare interconnected by the packaging components 28, can be achieved bycutting the third handling substrate 30 in the portions of the substratethat are separating separate grouping of components without damaging thecircuits. In some other embodiments, singulation is performed using RIEor DRIE to form ultra narrow singulation cuts such as <2 to 20 microns,laser singulation for singulation at <5 to 30 microns or with awater-cooled circular saw with diamond-tipped teeth for singulation cutstypically of >30 microns. RIE or DRIE are preferred where applicable forgreatest efficient use of a wafer provided the integration of theheterogeneous components can be accommodated with the thin spacing.

In some embodiments, the method depicted in FIG. 5 provides a methodthat is high speed, high volume, and low cost for precision handling,and assembling of structures, and equipment and fixtures to forproviding electronic devices that are suitable for Internet of Things(IoT) applications, wearable devices, devices used in the health carefield, devices for use with internet technology (IT) applications,devices in mobile applications, devices in industrial applications,home, robots, and/or automotive systems, sub components and solutions.

In some embodiments, the methods described herein provide for the use ofprecision pick and place fixtures, such as with glass, silicon (Si) oralternate materials to transfer die, die stacks, components, subsystems, packages, power sources, such as batteries, capacitors,alternate energy supply, wireless communication components, such asantenna, transducers, mirrors, light communications, optics, sensors,etc. toward assembly of components, subsystems, or systems, such as forIoT, Wearables, Health Care, IT, Mobile, industry, home, robots,automotive or other applications.

In some embodiments, the methods described herein provide for the use ofbond and debond adhesives, as means to move 1 to >10, 000, 000 chips,packages, components or other hardware at or near room temperature in anefficient and precise way to support precision X, Y and Z transfer withaccuracies to <1 um per each pick, place and bonding/assembly transferstep.

In some embodiments, the methods described herein provide for the use ofwafer to wafer, panel level processing, roll to roll processing usingSi, Glass, polymer, metal, or other materials to maintain precisionhandling, placement and bonding for die, components, sub systems andsystems. And/or alternatively use of self-assembly by means of surfacetension, magnetics, gravity/vibration with fixture cavities, holes orstructures or other means for component placement for bonding andassembly.

In some embodiments, the methods and structures provided herein allowfor pick and place and bonding such using ultra-violet (UV) curingadhesive and precision fixtures, such as planar glass, silicon ornon-planar glass, silicon or alternate fixture to pick multiple die,components or other hardware, transfer that hardware to a new surface,join and bond with solder, conductive adhesive, adhesive or alternateelectrical conductor

In some embodiments, equipment and fixtures are provided to pick andplace and assemble precision multiple integrated sub-systems andsystems. Note injected molded solder (IMS) may be deployed to bump asubset of die, sub-assemblies or components at a time using separatemasks for the targeted fraction of components to be integrated percycle.

FIG. 6 depicts a process flow for creating components in accordance witha miniaturization platform, in which the process flow includes a packagefirst wiring scheme. The process flow depicted in FIG. 6, which may bereferred to as package first integration with die to die wiring, issimilar to the process flow that is described with reference to FIG. 5.Referring to Step 1B, a package layer, i.e., a layer composed ofpackaging components 28, is transferred from the packaging die 29 to thethird handling substrate 30 to provide wiring and interconnectionstargeted for components from each die, i.e., microprocessors 22, memorydevices 24 and/or components devices 26. The packaging components 28 canbe mounted on a tape frame, handle wafer or other carrier, followed bymetal to metal bonding (Cu—Cu), and/or with Oxide to oxide bonding foreach attaché of multiple subcomponents.

Turning to Step 2B, the microprocessors 22 may be die mounted to thepackaging components 28 that are already present on the third handlingsubstrate 30. Step 2B is similar to Step 1A in FIG. 5. Therefore, thedescription of Step 1A with reference to process flow depicted in FIG. 5is suitable for describing one embodiment of Step 2B of the process flowdepicted in FIG. 6.

In a following process step, memory device 24 can be transferred fromthe memory die 23 to the packaging components 28 that are alreadypresent on the third handling substrate 30, at Step 3B. Step 3B that isillustrated in FIG. 6 is similar to Step 2A in FIG. 5. Therefore, thedescription of Step 2A with reference to process flow depicted in FIG. 5is suitable for describing one embodiment of Step 3B of the process flowdepicted in FIG. 6.

Referring to FIG. 6, at step 4B, component devices 26 from the componentdie 27 are transferred to the packaging components 28 that are alreadypresent on the third handling substrate 30. The component devices 26,the memory devices 24 and the microprocessors 22 are each verticallystacked on the packaging components 28. The component devices 26, memorydevices 24 and microprocessors are adjacently positioned on the samelevel of the device structure depicted in FIG. 6. Step 4B that isillustrated in FIG. 6 is similar to Step 3A in FIG. 5. Therefore, thedescription of Step 3A with reference to process flow depicted in FIG. 5is suitable for describing one embodiment of Step 4B of the process flowdepicted in FIG. 6.

Step 5B of the process flow depicted in FIG. 6 illustrates oneembodiment of solder bump metallization. A suitable description ofsolder bump metallization is provided by the description of Step 5A inFIG. 5.

Referring to FIG. 6, the process flow may continue with wafer thinningand singulation, as depicted in Step 6B. More specifically, the thirdhandling substrate 30 may be thinned, e.g., via backside thinning, andgroupings of microprocessors 22, memory devices 24 and component devices26 that are interconnected by the packaging components 28 may beseparated from one another. A further description for the process stepsillustrated in Step 6B is provided above in the description of Step 6Aof FIG. 5.

Post heterogeneous integration, the method can continue with testing (ifneeded), and the components can be sealed together with a variety ofsealing solutions, such as metallic seal rings, e.g., with In, Inalloys, lead free alloys such as SnAg or other metallic seal metals oralloys. In some embodiments, dielectric coatings and metal seals orovercoated metals, such as deposited Ti, dielectric inorganic coatings,such as SiO₂, SiN, or multiple layers of organic, inorganic and/ormetallic layers, which can prevent oxygen, water and/or other liquidsand gases from penetrating the system for a time period sufficient toprovide the product to be acceptable during storage and in use. Thesecoatings may protect the entire system or may only be used to protectthe electronics for the system or subsystem while providing electrical,optical and/or wireless pass through for communications, power deliveryor connection to external to the seal system functions that may includeelectrodes for bio electric, electro-chemical or optical diagnostics,sensing or monitoring, power delivery, antenna for RF communication,optical communications or other functions to serve the application suchas but not limited one or more of the following: inductors, inductorsand antenna, flexible antenna, flexible circuits, batteries, flexiblebatteries, sensors, bio-sensors, etc depending on system configurationand targeted applications(s).

FIG. 7 depicts one embodiment of a process flow for creating componentsin accordance with a miniaturization platform, in which the process flowincludes a die first solder interconnect scheme. The die firstintegration with solder interconnect/integration is similar to theintegration scheme depicted in FIG. 5, with the exception that themethod sequence depicted in FIG. 7 creates interconnections with solderbumps. In accordance with solder bump processing, pads are metalized onthe surface of the microprocessor, and solder dots are deposited on eachof the pads and/or pillars. The solder may be tin/lead based solder ormay be lead free solder and may be solder to pad attach, solder tosolder attach, pillar structures with metal and solder such as Cu/Solderor Cu/Ni/Solder. The solder dots may be deposited using physical vapordeposition (PVD), sputtering, evaporation, electrochemical plating,injection molded solder or alternate technique. In some embodiments, inaddition to interconnections, a solder seal may be used to hermeticallyprotect a portion or all of the system and can be created byalternatively creating interconnections with solder of components to apackage level and through use of seal rings for creating sealed barriersfor electronics sealing.

Step 1D that is depicted in FIG. 7 includes microprocessors 22 being diemounted to the third handling substrate 30 with the die input/output(I/O) facing upward. Step 1D depicted in FIG. 7 is similar to Step 1A asdescribed above with reference to FIG. 5. Therefore, the abovedescription of Step 1A referring to FIG. 5 is suitable for describingone embodiment of Step 1D in the process flow depicted in FIG. 7 withthe exception that in Step 1D the process continues with forming solderbumps on the electrical contact pads of the microprocessors 22.

Step 2D of FIG. 7 includes transferring memory devices 24 from thememory die 23 to the third handling substrate 30. Step 2D depicted inFIG. 7 is similar to Step 2A as described above with reference to FIG.5. Therefore, the above description of Step 2A referring to FIG. 5 issuitable for describing one embodiment of Step 2D in the process flowdepicted in FIG. 7 with the exception that in Step 2D the processcontinues with forming solder bumps on the electrical contact pads ofthe memory devices 24.

Step 3D of the process flow depicted in FIG. 7 includes transferring thecomponent devices 26 from the component die 27 to the third handlingsubstrate 30 after the memory devices 24, and the microprocessors 22have been transferred to the third handling substrate 30. In someexamples, the component devices 26 may include batteries, andtransmitters, or any of the devices that have been described above whendescribing the component die 27. Step 3D depicted in FIG. 7 is similarto Step 3A as described above with reference to FIG. 5. Therefore, theabove description of Step 3D referring to FIG. 5 is suitable fordescribing one embodiment of Step 3D in the process flow depicted inFIG. 7 with the exception that in Step 3D the process continues withforming solder bumps on the electrical contact pads of the componentdevices 26.

Turning to Step 4D of the process flow depicted in FIG. 7, the packagingcomponents 28 from the packaging die 29 may be transferred to theassembly of components, e.g., microprocessor 22, memory device 24,and/or component devices 26, that have already been transferred to thethird handling substrate 30 in accordance with Steps 1D-3D. Thepackaging components 28 include the electrical communication structures,e.g., wiring, that electrically interconnect the microprocessor 22,memory devices 24 and/or the component devices 26. The packagecomponents can include wiring and interconnections targeted forcomponent. As depicted in FIG. 7, the packaging components 28 is stackedatop the layer of microprocessors 22, memory devices 24, and/orcomponent devices 26 that have already been bonded to the third supportsubstrate 30.

Step 4D depicted in FIG. 7 is similar to Step 4A as described above withreference to FIG. 5. Therefore, the above description of Step 4Areferring to FIG. 5 is suitable for describing one embodiment of Step 4Din the process flow depicted in FIG. 7 with the exception that in Step4D the process electrical communication between the package components28 and the plurality of microprocessors 22, memory devices 24 andcomponent devices 24 is through solder bumps. Therefore, to provide anelectrical junction through the solder bumps, a re-melt process may beapplied using a heating method, such as solder reflow furnace, hot airor gas reflow, thermal compression bonding, laser bonding or alternatejoining methodology.

In some embodiments, following bonding of the package components 28,individual assemblies of microprocessors 22, memory devices 24 andcomponent devices 26, the assemblies of these components may behermetically sealed. Sealing can be provided by deposited material,e.g., insulating materials, and underfill materials, such as oxides,nitrides and oxynitrides, metal seals and/or multiple layers of thinorganic, inorganic and/or metal layers or metal seals to non pervioussubstrate or canister packages or inorganic seals for non-pervioussubstrates or canisters. In some embodiments, barrier coatings, e.g.,insulating dielectrics, such as oxides, nitrides and oxynitrides, maydeposited with the top surfaces to join with the insulating materialsthat are underfill materials or extended beneath the lower surfaces ofthe assemblies to create a barrier to the atmosphere.

Still referring to FIG. 7, at Step 5D solder balls, or otherelectrically conductive structures that can provide a means of joiningdevices, may be formed in electrical communication with the interconnectstructures in the packaging components 28 that provide electricalcommunication between sets of microprocessors 22, memory devices 24,and/or component devices 26.

Referring to Step 6D of FIG. 7, the third handling substrate 30 may bethinned, e.g., via backside thinning, and groupings of microprocessors22, memory devices 24 and component devices 26 that are interconnectedby the packaging components 28 may be separated from one another. Step6D of FIG. 7 is similar to Step 6A as described above with reference toFIG. 5. Therefore, the above description of Step 6A referring to FIG. 5is suitable for describing one embodiment of Step 6D in the process flowdepicted in FIG. 7.

FIG. 8 depicts one embodiment of a process flow for creating componentsin accordance with a miniaturization platform, in which the process flowincludes a package first solder interconnect scheme. The package firstintegration with solder interconnection/integration process flowdepicted in FIG. 8 is similar to the process flow depicted in FIG. 6,with the exception that in the process flow depicted in FIG. 8,interconnections between microprocessors 22, memory devices 24 andcomponent devices 26 is provide with solder to the base package. Theprocess flow depicted in FIG. 8 also provides methods of applyingsealing barriers for electronics sealing.

Referring to Step 1D, a package layer, i.e., a layer composed ofpackaging components 28, is transferred from the packaging die 29 to thethird handling substrate 30 to provide wiring and interconnectionstargeted for components from each die, i.e., microprocessors 22, memorydevices 24 and/or components devices 26. Step 1D also depicts themicroprocessors 22 being die mounted to the packaging components 28 thatare already present on the third handling substrate 30. Step 1D issimilar to Step 1B and Step 2B in FIG. 6. Therefore, the description ofStep 1B and 2B with reference to process flow depicted in FIG. 6 issuitable for describing one embodiment of Step 1D of the process flowdepicted in FIG. 8. The difference between the process flow depicted inFIG. 6 and the process flow depicted in FIG. 8 is that the packagingcomponents 28 are bonded to the third handling substrate 30 using solderbumps, and the microprocessors 22 are stacked and bonded to thepackaging components 28 using solder bumps.

In a following process step, memory devices 24 can be transferred fromthe memory die 23 to the packaging components 28 that are alreadypresent on the third handling substrate 30, at Step 2D. Step 2D that isillustrated in FIG. 8 is similar to Step 3B in FIG. 6. Therefore, thedescription of Step 3B with reference to process flow depicted in FIG. 6is suitable for describing one embodiment of Step 2D of the process flowdepicted in FIG. 8. The difference between the process flow depicted inFIG. 6 and the process flow depicted in FIG. 8 is that the memorydevices 24 are stacked and bonded to the packaging components 28 usingsolder bumps.

Referring to FIG. 8, at Step 3D, component devices 26 from the componentdie 27 are transferred to the packaging components 28 that are alreadypresent on the third handling substrate 30. The component devices 26,the memory devices 24 and the microprocessors 22 are each verticallystacked on the packaging components 28. The component devices 26, memorydevices 24 and microprocessors are adjacently positioned on the samelevel of the device structure depicted in FIG. 8. Step 3D that isillustrated in FIG. 8 is similar to Step 4B of the process flow depictedin FIG. 6. Therefore, the description of Step 4B with reference toprocess flow depicted in FIG. 6 is suitable for describing oneembodiment of Step 3D of the process flow depicted in FIG. 8. Thedifference between the process flow depicted in FIG. 6 and the processflow depicted in FIG. 8 is that the component devices 26 are stacked andbonded to the packaging components 28 using solder bumps.

In some embodiments, following bonding of the package components 28,individual assemblies of microprocessors 22, memory devices 24 andcomponent devices 26, the assemblies of these grouped structures may behermetically sealed. Sealing can be provided by deposited material,e.g., insulating materials, and underfill materials, such as oxides,nitrides and oxynitrides. In some embodiments, barrier coatings, e.g.,insulating dielectrics, such as oxides, nitrides and oxynitrides,dielectrics, metal coatings and metal seals which maybe deposited withthe top surfaces to join with the insulating materials that can includedielectric underfill adhesive materials or be coatings that seal topackage surfaces that may be impermeable to moisture or gases andtherefore provide a barrier to the atmosphere.

Referring to FIG. 8, the process flow may continue with wafer thinningand singulation, as depicted in Step 4D. More specifically, the thirdhandling substrate 30 may be thinned, e.g., via backside thinning, andgroupings of microprocessors 22, memory devices 24 and component devices26 that are interconnected by the packaging components 28 may beseparated from one another.

Post heterogeneous integration, the method can continue with testing (ifneeded), and the components can be sealed together with metal seals,dielectric and/or metal coatings SiO₂, SiN, or other coatings through tothe package level using etched or laser channels and top coatings tocreate sealed components that can later be joined to antenna, flexiblecircuits, sensors, batteries, etc depending on system configuration.

The integrated/miniaturized electronic sub-assemblies 100, such as theassemblies formed using the process flow described in FIGS. 5-8, orderivatives of these processes, where integrated sub assembly componentswhich may be isolated from other electronics by means of hermiticpackaging with Ti, SiN, SiO₂ layers or combinations of layers and sizemay be much smaller 10's of microns in X & Y and Z than other systemcomponents and may be on package or largest die of subassembly. Othercomponents by comparison may be millimeter (mm) size or larger in manyapplications and may include integration with additional sensors,antenna, batteries, or other components that may be on larger scale X-Yfootprint for integrated system.

Referring to FIGS. 9 and 10, the integrated sub components, i.e.,integrated/miniaturized electronic sub-assemblies 100, can then beintegrated with larger components where the smaller 10's of micronintegrated electronic sub-assemblies can then be integrated using rollto roll processing or panel level process or alternate for low cost ofhigh volume integrated internet of things (IoT), Wearables or othermicro systems, nano systems, and combinations thereof. FIG. 9 depictsmounting the integrated/miniaturized electronic sub-assemblies to afourth handling substrate 40 for transfer to a panel level process orroll to roll process. FIG. 10 is a side cross-sectional view depictingtransferring the integrated/miniaturized electronic sub-assemblies 100to a product level substrate 50, 60 by a panel level process or roll toroll process.

In some embodiments, a structure, method and system application for useof electronic system into a small integration platform or package isprovided by above disclosure. The structure and size/form factor canconsist of ultra thin/ultra small electronics/optics package platformsuch as Si, metal, glass, ceramic or composite from <50 μm to 5000 μmthick and <50 mm² area to thickness of <500 nm, and area of less than5000 μm², to sizes smaller than 50 μm³ to 500 μm³ in volume. Thestructure can consist of an integrated small electronics withmicroprocessor, memory, energy source, such as battery, capacitors,and/or energy harvesting device(s), rf antenna, NFC antenna, opticalcommunications, wired or wireless, sensors, package or hermetic package,nano or micro channels, wiring and interconnection. The structure canconsist can use rigid and/or flexible members, and/or packagedelectronics integration and thinned silicon package form factor withintegrated wiring, wire bonding and/or wireless interconnection and flipchip connection or alternative component interconnection to interconnectsmall sub-components. The structure can be employed for system and/orsubsystem prototyping, demonstrations and/or volume manufacturing ofsensors, smart tags, or other systems or sub components. Sizes ofpackage and integrated function can be from under 50 μm in the X, Y andZ directions to multiple millimeter (mm) is size.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

Having described preferred embodiments of a system and method (which areintended to be illustrative and not limiting), it is noted thatmodifications and variations can be made by persons skilled in the artin light of the above teachings. It is therefore to be understood thatchanges may be made in the particular embodiments disclosed which arewithin the scope of the invention as outlined by the appended claims.Having thus described aspects of the invention, with the details andparticularity required by the patent laws, what is claimed and desiredprotected by Letters Patent is set forth in the appended claims.

What is claimed is:
 1. A system for forming a heterogeneous electricaldevice comprising: a microprocessor die containing a plurality ofmicroprocessor devices; a memory device die containing a plurality ofmemory devices; a component die containing a plurality of componentdevices; a packaging die containing a plurality of packaging devices;and at least one transfer substrate for transferring a plurality of eachof said microprocessor devices, memory devices, component devices andpackaging devices to a supporting substrate, wherein the packagingdevices electrically interconnect the memory devices, component devicesand microprocessor devices in individualized groups.
 2. The system ofclaim 1, further comprising a field programmable gateway array (FPGA)device die containing a plurality of FPGA devices.
 3. The system ofclaim 2, further comprising a System on a Chip (SOC) die containing aplurality of SOC devices, wherein the at least one transfer substratecan transfer said FPGA devices and said SOC devices.
 4. The system ofclaim 1, wherein said microprocessor die contains between 1 and10,000,000 of said microprocessor devices.
 5. The system of claim 3,wherein the component devices are selected from the group consisting ofsensors, optical, radio frequency (RF) transmitters and receivers, nearfield communication (NFC), sound communication, batteries, capacitors,photovoltaics, and combinations thereof.